HM2N20MR Todos los transistores

 

HM2N20MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2N20MR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

HM2N20MR Datasheet (PDF)

 ..1. Size:922K  cn hmsemi
 hm2n20mr.pdf pdf_icon

HM2N20MR

HM2N20MR200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS DR

 8.1. Size:1034K  cn hmsemi
 hm2n20r.pdf pdf_icon

HM2N20MR

HM2N20RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)

 8.2. Size:576K  cn hmsemi
 hm2n20.pdf pdf_icon

HM2N20MR

HM2N20N-Channel Enhancement Mode Power MOSFET DDescription The HM2N20 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.3. Size:537K  cn hmsemi
 hm2n20pr.pdf pdf_icon

HM2N20MR

HM2N20PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM1N60R | RJK0629DPK | SIHP22N65E | PDN2309S | 2SK2907-01 | RUH1H130S | FDB6690S

 

 
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