HM2N20MR Datasheet and Replacement
Type Designator: HM2N20MR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: SOT23
HM2N20MR substitution
HM2N20MR Datasheet (PDF)
hm2n20mr.pdf

HM2N20MR200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS DR
hm2n20r.pdf

HM2N20RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
hm2n20.pdf

HM2N20N-Channel Enhancement Mode Power MOSFET DDescription The HM2N20 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
hm2n20pr.pdf

HM2N20PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
Datasheet: HM2809DR , HM2907 , HM2N10 , HM2N10B , HM2N10MR , HM2N15PR , HM2N15R , HM2N20 , 13N50 , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R , HM2N70 , HM2N70R , HM2P10PR .
History: NVMTS0D6N04C
Keywords - HM2N20MR MOSFET datasheet
HM2N20MR cross reference
HM2N20MR equivalent finder
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History: NVMTS0D6N04C



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