HM2N20MR Specs and Replacement

Type Designator: HM2N20MR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT23

HM2N20MR substitution

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HM2N20MR datasheet

 ..1. Size:922K  cn hmsemi
 hm2n20mr.pdf pdf_icon

HM2N20MR

HM2N20MR 200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS D R ... See More ⇒

 8.1. Size:1034K  cn hmsemi
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HM2N20MR

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 8.2. Size:576K  cn hmsemi
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HM2N20MR

HM2N20 N-Channel Enhancement Mode Power MOSFET D Description The HM2N20 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON) ... See More ⇒

 8.3. Size:537K  cn hmsemi
 hm2n20pr.pdf pdf_icon

HM2N20MR

HM2N20PR N-Channel Enhancement Mode Power MOSFET Description D The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: HM2809DR, HM2907, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, 5N60, HM2N20PR, HM2N20R, HM2N25, HM2N60, HM2N65R, HM2N70, HM2N70R, HM2P10PR

Keywords - HM2N20MR MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.