HM30N02D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM30N02D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 27 nC
   trⓘ - Tiempo de subida: 17.2 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: DFN5X6-8L

Búsqueda de reemplazo de MOSFET HM30N02D

HM30N02D Datasheet (PDF)

..1. Size:861K cn hmsemi
hm30n02d.pdf

HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

7.1. Size:474K cn hmsemi
hm30n02k.pdf

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

7.2. Size:707K cn hmsemi
hm30n02q.pdf

HM30N02QDescription The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

8.1. Size:1242K cn hmsemi
hm30n04q.pdf

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

8.2. Size:509K cn hmsemi
hm30n03k.pdf

HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

8.3. Size:909K cn hmsemi
hm30n04d.pdf

HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT17N80BC3G

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