HM30N02D Datasheet and Replacement
Type Designator: HM30N02D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DFN5X6-8L
HM30N02D substitution
HM30N02D Datasheet (PDF)
hm30n02d.pdf

HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02k.pdf

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02q.pdf

HM30N02QDescription The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n04q.pdf

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
Datasheet: HM2N70 , HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR , RU6888R , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , HM30N04Q , HM30N10 , HM30N10D , HM30N10K .
History: HGM095NE4SL | DMP4025LSD | P0903BT | AP4513GH | MMN4942DY | 60N06L-TA3-T | IRF3709ZSPBF
Keywords - HM30N02D MOSFET datasheet
HM30N02D cross reference
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History: HGM095NE4SL | DMP4025LSD | P0903BT | AP4513GH | MMN4942DY | 60N06L-TA3-T | IRF3709ZSPBF



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