HM30N02D Specs and Replacement
Type Designator: HM30N02D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: DFN5X6-8L
HM30N02D substitution
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HM30N02D datasheet
hm30n02d.pdf
HM30N02D Description The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒
hm30n02q.pdf
HM30N02Q Description The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒
hm30n04q.pdf
HM30N04Q N-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON) ... See More ⇒
Detailed specifications: HM2N70, HM2N70R, HM2P10PR, HM2P10R, HM3018, HM3018JR, HM3018KR, HM3018SR, AO3400A, HM30N02K, HM30N02Q, HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K
Keywords - HM30N02D MOSFET specs
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