HM30N02Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM30N02Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.2 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DFN3X3-8L

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HM30N02Q datasheet

 ..1. Size:707K  cn hmsemi
 hm30n02q.pdf pdf_icon

HM30N02Q

HM30N02Q Description The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 7.1. Size:474K  cn hmsemi
 hm30n02k.pdf pdf_icon

HM30N02Q

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 7.2. Size:861K  cn hmsemi
 hm30n02d.pdf pdf_icon

HM30N02Q

HM30N02D Description The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 8.1. Size:1242K  cn hmsemi
 hm30n04q.pdf pdf_icon

HM30N02Q

HM30N04Q N-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM2P10PR, HM2P10R, HM3018, HM3018JR, HM3018KR, HM3018SR, HM30N02D, HM30N02K, STP65NF06, HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K, HM30P02K, HM30P03Q