HM30N02Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM30N02Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 17.2 nS
   Conductancia de drenaje-sustrato (Cd): 500 pF
   Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
   Paquete / Cubierta: DFN3X3-8L

Búsqueda de reemplazo de MOSFET HM30N02Q

HM30N02Q Datasheet (PDF)

..1. Size:707K cn hmsemi
hm30n02q.pdf

HM30N02QDescription The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

7.1. Size:474K cn hmsemi
hm30n02k.pdf

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

7.2. Size:861K cn hmsemi
hm30n02d.pdf

HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

8.1. Size:1242K cn hmsemi
hm30n04q.pdf

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

8.2. Size:509K cn hmsemi
hm30n03k.pdf

HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

8.3. Size:909K cn hmsemi
hm30n04d.pdf

HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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