HM30N02Q MOSFET Datasheet: N-Ch, 20V, 30A. Full specification with pinout and replacement list

HM30N02Q Specs and Replacement

Type Designator: HM30N02Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DFN3X3-8L

HM30N02Q substitution

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HM30N02Q datasheet

..1. Size:707K cn hmsemi
hm30n02q.pdf pdf_icon

HM30N02Q Description The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒

7.1. Size:474K cn hmsemi
hm30n02k.pdf pdf_icon

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒

7.2. Size:861K cn hmsemi
hm30n02d.pdf pdf_icon

HM30N02D Description The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON) ... See More ⇒

8.1. Size:1242K cn hmsemi
hm30n04q.pdf pdf_icon

HM30N04Q N-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON) ... See More ⇒