HM30N10K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM30N10K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de HM30N10K MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM30N10K datasheet

 ..1. Size:642K  cn hmsemi
 hm30n10k.pdf pdf_icon

HM30N10K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.1. Size:931K  cn hmsemi
 hm30n10.pdf pdf_icon

HM30N10K

HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.2. Size:602K  cn hmsemi
 hm30n10d.pdf pdf_icon

HM30N10K

Pb Free Product HM30N10D N-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 8.1. Size:144K  chenmko
 chm30n15lngp.pdf pdf_icon

HM30N10K

CHENMKO ENTERPRISE CO.,LTD CHM30N15LNGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

MOSTRAR MÁS

Otros transistores... HM30N02D, HM30N02K, HM30N02Q, HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, IRLB3034, HM30P02K, HM30P03Q, HM30P10K, HM30P55, HM30P55K, HM3205, HM3205B, HM3205D