All MOSFET. HM30N10K Datasheet

 

HM30N10K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM30N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: TO252

 HM30N10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM30N10K Datasheet (PDF)

 ..1. Size:642K  cn hmsemi
 hm30n10k.pdf

HM30N10K HM30N10K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.1. Size:931K  cn hmsemi
 hm30n10.pdf

HM30N10K HM30N10K

HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 7.2. Size:602K  cn hmsemi
 hm30n10d.pdf

HM30N10K HM30N10K

Pb Free ProductHM30N10DN-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 8.1. Size:144K  chenmko
 chm30n15lngp.pdf

HM30N10K HM30N10K

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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