HM30P03Q Todos los transistores

 ..1. Size:1282K  cn hmsemi
 hm30p03q.pdf

HM30P03Q -30VDS 20VGS -30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin Description Pin Description VDSS=-30V VGSS= 20V ID=-30A RDS(ON)=14m (max.)@VGS=-10V RDS(ON)=22m (max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

 8.1. Size:1112K  cn hmsemi
 hm30p02k.pdf

P-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

 9.1. Size:569K  cn hmsemi
 hm30p10k.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.2. Size:524K  cn hmsemi
 hm30p55k.pdf

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

 9.3. Size:547K  cn hmsemi
 hm30p55.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)