All MOSFET. HM30P03Q Datasheet

 

HM30P03Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM30P03Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3-8L

 HM30P03Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM30P03Q Datasheet (PDF)

 ..1. Size:1282K  cn hmsemi
 hm30p03q.pdf

HM30P03Q HM30P03Q

HM30P03Q-30VDS20VGS-30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin DescriptionPin Description VDSS=-30VVGSS=20VID=-30A RDS(ON)=14m(max.)@VGS=-10V RDS(ON)=22m(max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

 8.1. Size:1112K  cn hmsemi
 hm30p02k.pdf

HM30P03Q HM30P03Q

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

 9.1. Size:569K  cn hmsemi
 hm30p10k.pdf

HM30P03Q HM30P03Q

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.2. Size:524K  cn hmsemi
 hm30p55k.pdf

HM30P03Q HM30P03Q

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

 9.3. Size:547K  cn hmsemi
 hm30p55.pdf

HM30P03Q HM30P03Q

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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