HM3205D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM3205D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 180 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 105 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 125 nC
Tiempo de subida (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 470 pF
Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET HM3205D
HM3205D Datasheet (PDF)
hm3205d.pdf
HM3205D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
hm3205.pdf
HM3205 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =120A RDS(ON)
hm3205b.pdf
HM3205B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
chm3203cmgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3203CMGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59/SOT-346 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)
hm3207d.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207t.pdf
HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207bd.pdf
HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
hm3207b.pdf
HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IPB03N03LBG
