HM3205D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM3205D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 180 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 105 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 125 nC
Время нарастания (tr): 19 ns
Выходная емкость (Cd): 470 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
Тип корпуса: TO263
HM3205D Datasheet (PDF)
hm3205d.pdf
HM3205D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
hm3205.pdf
HM3205 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =120A RDS(ON)
hm3205b.pdf
HM3205B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =55V,ID =105A RDS(ON)
chm3203cmgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3203CMGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 6.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59/SOT-346 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)
hm3207d.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207t.pdf
HM3207TN-Channel Enhancement Mode Power MOSFET Description The HM3207T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)
hm3207bd.pdf
HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
hm3207b.pdf
HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)
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