HM3207BD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM3207BD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 310 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 914 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de HM3207BD MOSFET

- Selecciónⓘ de transistores por parámetros

 

HM3207BD datasheet

 ..1. Size:512K  cn hmsemi
hm3207bd.pdf pdf_icon

HM3207BD

HM3207BD N-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 7.1. Size:602K  cn hmsemi
hm3207b.pdf pdf_icon

HM3207BD

HM3207B N-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 8.1. Size:379K  cn hmsemi
hm3207d.pdf pdf_icon

HM3207BD

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 8.2. Size:492K  cn hmsemi
hm3207.pdf pdf_icon

HM3207BD

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

Otros transistores... HM30P10K, HM30P55, HM30P55K, HM3205, HM3205B, HM3205D, HM3207, HM3207B, IRFP064N, HM3207D, HM3207T, HM32N20, HM32N20F, HM3305, HM3305D, HM3306, HM3307