HM3207BD Todos los transistores

 

HM3207BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM3207BD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 914 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de HM3207BD MOSFET

   - Selección ⓘ de transistores por parámetros

 

HM3207BD Datasheet (PDF)

 ..1. Size:512K  cn hmsemi
 hm3207bd.pdf pdf_icon

HM3207BD

HM3207BDN-Channel Enhancement Mode Power MOSFET Description The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 7.1. Size:602K  cn hmsemi
 hm3207b.pdf pdf_icon

HM3207BD

HM3207BN-Channel Enhancement Mode Power MOSFET Description The HM3207B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =70V,ID =180A Schematic diagram RDS(ON)

 8.1. Size:379K  cn hmsemi
 hm3207d.pdf pdf_icon

HM3207BD

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 8.2. Size:492K  cn hmsemi
 hm3207.pdf pdf_icon

HM3207BD

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... HM30P10K , HM30P55 , HM30P55K , HM3205 , HM3205B , HM3205D , HM3207 , HM3207B , 5N50 , HM3207D , HM3207T , HM32N20 , HM32N20F , HM3305 , HM3305D , HM3306 , HM3307 .

History: IPA65R065C7 | SUU10P10-195 | NVMFS6B14NL

 

 
Back to Top

 


 
.