2SK2524-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2524-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 40 W
Tensión drenaje-fuente (Vds): 450 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 9 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 1 Ohm
Empaquetado / Estuche: TO220F15
Búsqueda de reemplazo de MOSFET 2SK2524-01MR
2SK2524-01MR Datasheet (PDF)
4.1. 2sk2528-01.pdf 
Size:149K _update
N-channel MOS-FET 2SK2528-01 FAP-II Series 900V 3,6Ω 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival
4.2. 2sk2527-01mr.pdf Size:137K _update
N-channel MOS-FET 2SK2527-01MR FAP-II Series 900V 3,6Ω 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv
4.3. 2sk2529.pdf Size:89K _renesas
2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m? typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D G 1. Gate 2. Drain 3. Source 1
Otros transistores... 2SK2513 , 2SK2514 , 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , IRFZ44 , 2SK2525-01 , 2SK2529 , 2SK2541 , 2SK2553 , 2SK2554 , 2SK2586 , 2SK2684 , 2SK2701 .
