2SK2524-01MR
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2524-01MR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package:
TO220F
2SK2524-01MR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2524-01MR
Datasheet (PDF)
8.1. Size:162K 1
2sk2520-01mr.pdf
N-channel MOS-FET2SK2520-01MRFAP-II Series 200V 0,4 10A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
8.2. Size:162K 1
2sk2522-01mr.pdf
N-channel MOS-FET2SK2522-01MRFAP-II Series 200V 0,18 18A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
8.4. Size:154K 1
2sk2521-01.pdf
N-channel MOS-FET2SK2521-01FAP-II Series 200V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
8.5. Size:160K 1
2sk2523-01.pdf
N-channel MOS-FET2SK2523-01FAP-II Series 450V 1 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivalen
8.6. Size:89K renesas
2sk2529.pdf
2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drai
8.7. Size:149K fuji
2sk2528-01.pdf
N-channel MOS-FET2SK2528-01FAP-II Series 900V 3,6 5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival
8.8. Size:137K fuji
2sk2527-01mr.pdf
N-channel MOS-FET2SK2527-01MRFAP-II Series 900V 3,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
Datasheet: 2SK2513
, 2SK2514
, 2SK2515
, 2SK2519-01
, 2SK2520-01MR
, 2SK2521-01
, 2SK2522-01MR
, 2SK2523-01
, IRF540N
, 2SK2525-01
, 2SK2529
, 2SK2541
, 2SK2553
, 2SK2554
, 2SK2586
, 2SK2684
, 2SK2701
.