FDMC2514SDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

October 2010FDMC2514SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

FDMC2514SDCN-Channel Dual CoolTM 33 PowerTrench SyncFETTM25 V, 40 A, 3.5 mGeneral DescriptionThis N-Channel MOSFET is produced using ONSemiconductors advanced PowerTrench process.FeaturesAdvancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

FDMC2514SDCwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control

July 2010FDMC2512SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

January 2007FDMC2523PtmP-Channel QFET -150V, -3A, 1.5Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5AThese P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF)planar stripe, DMOS technology. This advanced technology has Fast Switchingbeen especially tailored t

January 2007FDMC2674tmN-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mFeatures General Description Max rDS(on) = 366m at VGS = 10V, ID = 1.0AUltraFET device combines characteristics that enablebenchmark efficiency in power conversion applications. Typ Qg = 12.7nC at VGS = 10VOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller chargethese de

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur