FDMC2514SDC datasheet, подбор замены

 ..1. Size:292K  fairchild semi
 fdmc2514sdc.pdf 

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

 ..2. Size:333K  onsemi
 fdmc2514sdc.pdf 

FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench SyncFETTM 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process. Features Advancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

 ..3. Size:857K  cn vbsemi
 fdmc2514sdc.pdf 

FDMC2514SDC www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control

 7.1. Size:319K  fairchild semi
 fdmc2512sdc.pdf 

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

 8.1. Size:220K  fairchild semi
 fdmc2523p.pdf 

January 2007 FDMC2523P tm P-Channel QFET -150V, -3A, 1.5 Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF) planar stripe, DMOS technology. This advanced technology has Fast Switching been especially tailored t

 9.1. Size:239K  fairchild semi
 fdmc2674.pdf 

January 2007 FDMC2674 tm N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m Features General Description Max rDS(on) = 366m at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Typ Qg = 12.7nC at VGS = 10V Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller charge these de

 9.2. Size:396K  fairchild semi
 fdmc2610.pdf 

January 2007 FDMC2610 tm N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200m Features General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5A process. It has been optimized for power management Low Profile - 1mm max in a Pow

 9.3. Size:318K  onsemi
 fdmc2674.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur