HM3407A Todos los transistores

 ..1. Size:526K  cn hmsemi
 hm3407a.pdf

HM3407A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3407A uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S GENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 8.1. Size:460K  cn hmsemi
 hm3407b.pdf

HM3407B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3407B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S GENERAL FEATURES VDS = -30V,ID = -4.1A Schematic diagram RDS(ON)

 9.1. Size:1663K  cn vbsemi
 hm3400pr.pdf

HM3400PR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 9.2. Size:547K  cn hmsemi
 hm3401.pdf

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 9.3. Size:588K  cn hmsemi
 hm3401d.pdf

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.6A RDS(ON)

 9.4. Size:384K  cn hmsemi
 hm3400 sot23-3l.pdf

HM3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 9.5. Size:560K  cn hmsemi
 hm3401c.pdf

HM3401C P-Channel Enhancement Mode Power MOSFET Description D The HM3401C uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load G switch or in PWM applications. S General Features VDS = -30V,ID = -2.5A Schematic diagram RDS(ON)

 9.6. Size:478K  cn hmsemi
 hm3400c.pdf

N-Channel Enhancement Mode Power MOSFET D Description The uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = 30V,ID = 3.6A RDS(ON)

 9.7. Size:679K  cn hmsemi
 hm3400dr.pdf

HM3400DR N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 8 A Schematic diagram RDS(ON)

 9.8. Size:459K  cn hmsemi
 hm3401b.pdf

HM3401B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -4.2A RDS(ON)

 9.9. Size:446K  cn hmsemi
 hm3406b.pdf

HM3406B N-Channel Enhancement Mode Power MOSFET Description D The HM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable G for use as a load switch and PWM applications. S Genera Features VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 9.10. Size:474K  cn hmsemi
 hm3400d.pdf

HM3400D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3400D uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.0A Schematic diagram RDS(ON)

 9.11. Size:929K  cn hmsemi
 hm3401pr.pdf

HM3401PR P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3401PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5.2A RDS(ON)

 9.12. Size:307K  cn hmsemi
 hm3400b.pdf

3400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The 3400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 9.13. Size:533K  cn hmsemi
 hm3406h.pdf