FDMC2523P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC2523P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: POWER33

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FDMC2523P datasheet

 ..1. Size:220K  fairchild semi
 fdmc2523p.pdf pdf_icon

FDMC2523P

January 2007 FDMC2523P tm P-Channel QFET -150V, -3A, 1.5 Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF) planar stripe, DMOS technology. This advanced technology has Fast Switching been especially tailored t

 8.1. Size:292K  fairchild semi
 fdmc2514sdc.pdf pdf_icon

FDMC2523P

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

 8.2. Size:319K  fairchild semi
 fdmc2512sdc.pdf pdf_icon

FDMC2523P

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

 8.3. Size:333K  onsemi
 fdmc2514sdc.pdf pdf_icon

FDMC2523P

FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench SyncFETTM 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process. Features Advancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

MOSTRAR MÁS

Otros transistores... STS2621, FDMB3800N, STS2620A, FDMB3900AN, FDMB668P, FDMC15N06, FDMC2512SDC, FDMC2514SDC, 2SK3568, FDMC2610, STS2620, FDMC2674, FDMC3020DC, STS2601, FDMC3612, STS2309A, FDMC4435BZ