FDMC2523P Datasheet and Replacement

January 2007FDMC2523PtmP-Channel QFET -150V, -3A, 1.5Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5AThese P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF)planar stripe, DMOS technology. This advanced technology has Fast Switchingbeen especially tailored t

October 2010FDMC2514SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

July 2010FDMC2512SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

FDMC2514SDCN-Channel Dual CoolTM 33 PowerTrench SyncFETTM25 V, 40 A, 3.5 mGeneral DescriptionThis N-Channel MOSFET is produced using ONSemiconductors advanced PowerTrench process.FeaturesAdvancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

FDMC2514SDCwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control