FDMC2523P MOSFET Datasheet: P-Ch, 150V, 3A. Full specification with pinout and replacement list

FDMC2523P Specs and Replacement

Type Designator: FDMC2523P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: POWER33

FDMC2523P substitution

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FDMC2523P datasheet

..1. Size:220K fairchild semi
fdmc2523p.pdf pdf_icon

January 2007 FDMC2523P tm P-Channel QFET -150V, -3A, 1.5 Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF) planar stripe, DMOS technology. This advanced technology has Fast Switching been especially tailored t... See More ⇒

8.1. Size:292K fairchild semi
fdmc2514sdc.pdf pdf_icon

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m... See More ⇒

8.2. Size:319K fairchild semi
fdmc2512sdc.pdf pdf_icon

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a... See More ⇒

8.3. Size:333K onsemi
fdmc2514sdc.pdf pdf_icon

FDMC2514SDC N-Channel Dual CoolTM 33 PowerTrench SyncFETTM 25 V, 40 A, 3.5 m General Description This N-Channel MOSFET is produced using ON Semiconductor s advanced PowerTrench process. Features Advancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent... See More ⇒