HM3413B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM3413B

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SOT23

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HM3413B datasheet

 ..1. Size:537K  cn hmsemi
 hm3413b.pdf pdf_icon

HM3413B

HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 8.1. Size:98K  chenmko
 chm3413kgp.pdf pdf_icon

HM3413B

CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE * Small flat package. (SC-88A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5) * Hi

 8.2. Size:98K  chenmko
 chm3413sgp.pdf pdf_icon

HM3413B

CHENMKO ENTERPRISE CO.,LTD CHM3413SGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE * Small flat package. (SC-88 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (6) (1) * Hig

 8.3. Size:613K  cn hmsemi
 hm3413.pdf pdf_icon

HM3413B

HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

MOSTRAR MÁS

Otros transistores... HM3401B, HM3401C, HM3401D, HM3401PR, HM3406B, HM3407A, HM3407B, HM3413, 2N7000, HM3414, HM3414B, HM3415E, HM3416B, HM3421, HM3421B, HM3422, HM3422A