HM3413B Specs and Replacement
Type Designator: HM3413B
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: SOT23
HM3413B substitution
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HM3413B datasheet
hm3413b.pdf
HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON) ... See More ⇒
chm3413kgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE * Small flat package. (SC-88A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5) * Hi... See More ⇒
chm3413sgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM3413SGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE * Small flat package. (SC-88 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (6) (1) * Hig... See More ⇒
hm3413.pdf
HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON) ... See More ⇒
Detailed specifications: HM3401B, HM3401C, HM3401D, HM3401PR, HM3406B, HM3407A, HM3407B, HM3413, 2N7000, HM3414, HM3414B, HM3415E, HM3416B, HM3421, HM3421B, HM3422, HM3422A
Keywords - HM3413B MOSFET specs
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