All MOSFET. HM3413B Datasheet

 

HM3413B MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3413B
   Marking Code: 3413
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.3 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23

 HM3413B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3413B Datasheet (PDF)

 ..1. Size:537K  cn hmsemi
hm3413b.pdf

HM3413B HM3413B

HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 8.1. Size:98K  chenmko
chm3413kgp.pdf

HM3413B HM3413B

CHENMKO ENTERPRISE CO.,LTDCHM3413KGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88A/SOT-353FEATURE* Small flat package. (SC-88A )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5)* Hi

 8.2. Size:98K  chenmko
chm3413sgp.pdf

HM3413B HM3413B

CHENMKO ENTERPRISE CO.,LTDCHM3413SGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (6)(1)* Hig

 8.3. Size:613K  cn hmsemi
hm3413.pdf

HM3413B HM3413B

HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

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History: HM4441A

 

 
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