HM3415E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM3415E
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET HM3415E

HM3415E Datasheet (PDF)

..1. Size:577K cn hmsemi
hm3415e.pdf

HM3415EP-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)

9.1. Size:98K chenmko
chm3413kgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM3413KGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88A/SOT-353FEATURE* Small flat package. (SC-88A )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5)* Hi

9.2. Size:98K chenmko
chm3413sgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM3413SGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-88/SOT-363FEATURE* Small flat package. (SC-88 )* High density cell design for extremely low RDS(ON). * Rugged and reliable. (6)(1)* Hig

9.3. Size:491K cn hmsemi
hm3414.pdf

HM3414N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

9.4. Size:537K cn hmsemi
hm3413b.pdf

HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

9.5. Size:613K cn hmsemi
hm3413.pdf

HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

9.6. Size:487K cn hmsemi
hm3414b.pdf

HM3414BN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM3414B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

9.7. Size:871K cn hmsemi
hm3416b.pdf

HM3416BN-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)

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