HM3415E - описание и поиск аналогов

 ..1. Size:577K  cn hmsemi
 hm3415e.pdf 

HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features VDS = -20V,ID =-4A Schematic diagram RDS(ON)

 9.1. Size:98K  chenmko
 chm3413kgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE * Small flat package. (SC-88A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5) * Hi

 9.2. Size:98K  chenmko
 chm3413sgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM3413SGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE * Small flat package. (SC-88 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (6) (1) * Hig

 9.3. Size:491K  cn hmsemi
 hm3414.pdf 

HM3414 N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

 9.4. Size:537K  cn hmsemi
 hm3413b.pdf 

HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.5. Size:613K  cn hmsemi
 hm3413.pdf 

HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.6. Size:487K  cn hmsemi
 hm3414b.pdf 

 9.7. Size:871K  cn hmsemi
 hm3416b.pdf 

HM3416B N-Channel Enhancement Mode Power MOSFET Description The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features Schematic diagram VDS = 20V,ID =6A RDS(ON)