HM35P03 Todos los transistores

 

HM35P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM35P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

HM35P03 Datasheet (PDF)

 ..1. Size:1373K  cn hmsemi
hm35p03.pdf pdf_icon

HM35P03

HM35P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

 0.1. Size:1209K  cn hmsemi
hm35p03d.pdf pdf_icon

HM35P03

HM35P03DP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. SGENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON)

 0.2. Size:1065K  cn hmsemi
hm35p03k.pdf pdf_icon

HM35P03

HM35P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

 8.1. Size:826K  cn hmsemi
hm35p04d.pdf pdf_icon

HM35P03

HM35P04DP-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLP042N10G-P | FQA5N90 | FQA11N90CF109

 

 
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