HM35P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM35P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HM35P03 MOSFET
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HM35P03 datasheet
hm35p03.pdf
HM35P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -35A D S RDS(ON)
hm35p03d.pdf
HM35P03D P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. S GENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON)
hm35p03k.pdf
HM35P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -35A D S RDS(ON)
hm35p04d.pdf
HM35P04D P-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON)
Otros transistores... HM3416B, HM3421, HM3421B, HM3422, HM3422A, HM3426B, HM35N03D, HM35N03Q, IRF4905, HM35P03D, HM35P03K, HM35P04D, HM3710, HM3710K, HM3800D, HM3808, HM3N10MR
History: CSM150
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