HM35P03K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM35P03K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HM35P03K

HM35P03K Datasheet (PDF)

..1. Size:1065K cn hmsemi
hm35p03k.pdf

HM35P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

7.1. Size:1209K cn hmsemi
hm35p03d.pdf

HM35P03DP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. SGENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON)

7.2. Size:1373K cn hmsemi
hm35p03.pdf

HM35P03P-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM35P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -35A D SRDS(ON)

8.1. Size:826K cn hmsemi
hm35p04d.pdf

HM35P04DP-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: