HM35P03K Specs and Replacement
Type Designator: HM35P03K
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
HM35P03K substitution
- MOSFET ⓘ Cross-Reference Search
HM35P03K datasheet
hm35p03k.pdf
HM35P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -35A D S RDS(ON) ... See More ⇒
hm35p03d.pdf
HM35P03D P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. S GENERAL FEATURES Schematic diagram V = -30V,ID = -35A D S RDS(ON) ... See More ⇒
hm35p03.pdf
HM35P03 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM35P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -35A D S RDS(ON) ... See More ⇒
hm35p04d.pdf
HM35P04D P-Channel Enhancement Mode Power MOSFET Description The HM35P04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-40V,ID =-35A RDS(ON) ... See More ⇒
Detailed specifications: HM3421B, HM3422, HM3422A, HM3426B, HM35N03D, HM35N03Q, HM35P03, HM35P03D, AO3401, HM35P04D, HM3710, HM3710K, HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A
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