HM3N120F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM3N120F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19.4 nS
   Cossⓘ - Capacitancia de salida: 59.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: TO220F

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HM3N120F Datasheet (PDF)

..1. Size:425K cn hmsemi
hm3n120f.pdf

HM3N120FGeneral Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

7.1. Size:610K cn hmsemi
hm3n120a.pdf

HM3N120AGeneral Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi

9.1. Size:941K cn hmsemi
hm3n10mr.pdf

HM3N10MRN-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

9.2. Size:422K cn hmsemi
hm3n150f.pdf

HM3N150AGeneral Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A DPD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

9.3. Size:645K cn hmsemi
hm3n10pr.pdf

HM3N10PR N-Channel Enhancement Mode Power MOSFET Description DThe HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

9.4. Size:358K cn hmsemi
hm3n150a.pdf

General Description VDSS 1500 V HM3N150A the silicon N-channel Enhanced ID 3 A PD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

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