HM3N120F Specs and Replacement

Type Designator: HM3N120F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.4 nS

Cossⓘ - Output Capacitance: 59.8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO220F

HM3N120F substitution

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HM3N120F datasheet

 ..1. Size:425K  cn hmsemi
 hm3n120f.pdf pdf_icon

HM3N120F

HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

 7.1. Size:610K  cn hmsemi
 hm3n120a.pdf pdf_icon

HM3N120F

HM3N120A General Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi... See More ⇒

 9.1. Size:941K  cn hmsemi
 hm3n10mr.pdf pdf_icon

HM3N120F

HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

 9.2. Size:422K  cn hmsemi
 hm3n150f.pdf pdf_icon

HM3N120F

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat... See More ⇒

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Detailed specifications: HM35P04D, HM3710, HM3710K, HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A, 12N60, HM3N150A, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, HM3N80

Keywords - HM3N120F MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs