HM4030D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM4030D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 118 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 139 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 916 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET HM4030D

HM4030D Datasheet (PDF)

..1. Size:844K cn hmsemi
hm4030d.pdf

HM4030 N-Channel Trench Power MOSFET General Description The HM4030D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, loadDS(ON) switching especially for E-Bike controller applications.Features V =100V; I =118A@ V =10V; DS D GSTO-263-2L top view R

8.1. Size:404K cn hmsemi
hm4030.pdf

N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatures

9.1. Size:253K htsemi
hm4033.pdf

HM4033 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Powe

9.2. Size:36K hsmc
hm4033.pdf

Spec. No. : HE9523HI-SINCERITYIssued Date : 1997.04.17Revised Date : 2005.06.30MICROELECTRONICS CORP.Page No. : 1/4HM4033PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM4033 is designed for high current general purpose amplifier applications.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......................................................

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: