HM40N06D Todos los transistores

 ..1. Size:701K  cn hmsemi
 hm40n06d.pdf

HM40N06D N-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON)

 8.1. Size:1067K  cn hmsemi
 hm40n04k.pdf

HM40N04K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON)

 8.2. Size:949K  cn hmsemi
 hm40n04d.pdf

HM40N04D N-Channel Enhancement Mode Power MOSFET Description The HM40N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =40A RDS(ON)

 9.1. Size:512K  cn hmsemi
 hm40n20.pdf

HM40N20 N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 9.2. Size:534K  cn hmsemi
 hm40n10k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.3. Size:608K  cn hmsemi
 hm40n15ka.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.4. Size:599K  cn hmsemi
 hm40n20d.pdf

HM40N20D N-Channel Enhancement Mode Power MOSFET Description The HM40N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON)

 9.5. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.6. Size:511K  cn hmsemi
 hm40n15k.pdf

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 9.7. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)