HM40N06D Specs and Replacement
Type Designator: HM40N06D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 237 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: DFN5X6-8L
HM40N06D substitution
- MOSFET ⓘ Cross-Reference Search
HM40N06D datasheet
hm40n06d.pdf
HM40N06D N-Channel Enhancement Mode Power MOSFET Description The HM40N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =40A RDS(ON) ... See More ⇒
hm40n04k.pdf
HM40N04K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM40N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =40A RDS(ON) ... See More ⇒
hm40n04d.pdf
HM40N04D N-Channel Enhancement Mode Power MOSFET Description The HM40N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =40A RDS(ON) ... See More ⇒
hm40n20.pdf
HM40N20 N-Channel Enhancement Mode Power MOSFET Description The HM40N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =40A RDS(ON) ... See More ⇒
Detailed specifications: HM3N80, HM3N90F, HM3N90I, HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, IRF1407, HM40N10, HM40N10K, HM40N10KA, HM40N15K, HM40N15KA, HM40N20, HM40N20D, HM40P04K
Keywords - HM40N06D MOSFET specs
HM40N06D cross reference
HM40N06D equivalent finder
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History: STB200NF03
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