HM40N15KA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM40N15KA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 40 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
Qgⓘ - Carga de la puerta: 105 nC
trⓘ - Tiempo de subida: 11.8 nS
Cossⓘ - Capacitancia de salida: 203 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HM40N15KA MOSFET
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HM40N15KA datasheet
hm40n15ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
hm40n15k.pdf
HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
hm40n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n10ka.pdf
HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
Otros transistores... HM4030D , HM40N04D , HM40N04K , HM40N06D , HM40N10 , HM40N10K , HM40N10KA , HM40N15K , SI2302 , HM40N20 , HM40N20D , HM40P04K , HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 .
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