All MOSFET. HM40N15KA Datasheet

 

HM40N15KA Datasheet and Replacement


   Type Designator: HM40N15KA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 203 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: TO252
 

 HM40N15KA substitution

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HM40N15KA Datasheet (PDF)

 ..1. Size:608K  cn hmsemi
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HM40N15KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 6.1. Size:511K  cn hmsemi
hm40n15k.pdf pdf_icon

HM40N15KA

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 8.1. Size:534K  cn hmsemi
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HM40N15KA

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.2. Size:608K  cn hmsemi
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HM40N15KA

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

Datasheet: HM4030D , HM40N04D , HM40N04K , HM40N06D , HM40N10 , HM40N10K , HM40N10KA , HM40N15K , IRFZ46N , HM40N20 , HM40N20D , HM40P04K , HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 .

History: SI4880DY | AO6806

Keywords - HM40N15KA MOSFET datasheet

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