HM4302B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM4302B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente |Vds|: 30 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 3 V

Carga de compuerta (Qg): 41 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 460 pF

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Paquete / Caja (carcasa): SOP8

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HM4302B Datasheet (PDF)

..1. hm4302b.pdf Size:667K _cn_hmsemi

HM4302BN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =25A RDS(ON)

8.1. hm4302.pdf Size:447K _cn_hmsemi

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID = A RDS(ON)

9.1. chm4301pagp.pdf Size:102K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM4301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

9.2. chm4308jgp.pdf Size:196K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM4308JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 5.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged an

9.3. chm4301jgp.pdf Size:101K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM4301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High pow

9.4. chm4301zgp.pdf Size:111K _chenmko

CHENMKO ENTERPRISE CO.,LTDCHM4301ZGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 6.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.15* High density cell design for extremely low RDS(ON). 6.50+0.200.90+0.

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