HM4302B Todos los transistores

 

HM4302B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4302B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 460 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: SOP8
 

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HM4302B Datasheet (PDF)

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HM4302B

HM4302BN-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4302B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =25A RDS(ON)

 8.1. Size:447K  cn hmsemi
 hm4302.pdf pdf_icon

HM4302B

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID = A RDS(ON)

 9.1. Size:101K  chenmko
 chm4301jgp.pdf pdf_icon

HM4302B

CHENMKO ENTERPRISE CO.,LTDCHM4301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High pow

 9.2. Size:102K  chenmko
 chm4301pagp.pdf pdf_icon

HM4302B

CHENMKO ENTERPRISE CO.,LTDCHM4301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

MOSTRAR MÁS

Otros transistores... HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 , HM4264 , HM4264B , HM4302 , RU6888R , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , OSG60R074HZF , OSG60R074FZF , SRC60R078BTF .

History: TK100A10N1 | WMO07N65C4 | SE10030A | 2SK1796 | STFI13NM60N | HFW50N06

 

 
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