HM4302B Specs and Replacement
Type Designator: HM4302B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
HM4302B substitution
- MOSFET ⓘ Cross-Reference Search
HM4302B datasheet
hm4302.pdf
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID = A RDS(ON) ... See More ⇒
chm4301jgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4301JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. ( SO-8 ) * Super high density cell design for extremely low RDS(ON). ( ) 4.06 0.160 ( ) 3.70 0.146 * High pow... See More ⇒
chm4301pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM4301PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Hi... See More ⇒
Detailed specifications: HM40P06K, HM4110, HM4110T, HM4240, HM4260, HM4264, HM4264B, HM4302, AO3400A, 2SK68A, CRJF390N65GC, HCA60R150T, MDP10N027TH, NVHL055N60S5F, OSG60R074HZF, OSG60R074FZF, SRC60R078BTF
Keywords - HM4302B MOSFET specs
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