MDP10N027TH Todos los transistores

 ..1. Size:1067K  1
 mdp10n027th.pdf

MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachip s MOSFET V = 100V DS Technology, which provides high performance in on-state resistance, I = 120A @V = 10V D GS fast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.1. Size:1025K  magnachip
 mdp10n055.pdf

MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChip s MOSFET Technology, V = 100V DS which provides high performance in on-state resistance, fast I = 120A @V = 10V D GS switching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.2. Size:954K  magnachip
 mdp10n055th.pdf

MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachip s MOSFET V = 100V DS Technology, which provides high performance in on-state resistance, I = 120A @V = 10V D GS fast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.3. Size:206K  inchange semiconductor
 mdp10n055.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MDP10N055 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU

 7.4. Size:288K  inchange semiconductor
 mdp10n055th.pdf

isc N-Channel MOSFET Transistor MDP10N055TH FEATURES Drain Current I = 130A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.5m (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so