Справочник MOSFET. MDP10N027TH

 

MDP10N027TH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MDP10N027TH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 416 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 147 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 2050 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO220

 Аналог (замена) для MDP10N027TH

 

 

MDP10N027TH Datasheet (PDF)

 ..1. Size:1067K  1
 mdp10n027th.pdf

MDP10N027TH MDP10N027TH

MDP10N027TH Single N-channel Trench MOSFET 100V, 120A, 2.8m General Description Features The MDP10N027TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.1. Size:1025K  magnachip
 mdp10n055.pdf

MDP10N027TH MDP10N027TH

MDP10N055 Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055 uses advanced MagnaChips MOSFET Technology, V = 100V DSwhich provides high performance in on-state resistance, fast I = 120A @V = 10V D GSswitching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.2. Size:954K  magnachip
 mdp10n055th.pdf

MDP10N027TH MDP10N027TH

MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5m General Description Features The MDP10N055TH uses advanced Magnachips MOSFET V = 100V DSTechnology, which provides high performance in on-state resistance, I = 120A @V = 10V D GSfast switching performance, and excellent quality. Very low on-resistance R DS(ON)

 7.3. Size:206K  inchange semiconductor
 mdp10n055.pdf

MDP10N027TH MDP10N027TH

INCHANGE Semiconductorisc N-Channel MOSFET Transistor MDP10N055FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMU

 7.4. Size:288K  inchange semiconductor
 mdp10n055th.pdf

MDP10N027TH MDP10N027TH

isc N-Channel MOSFET Transistor MDP10N055THFEATURESDrain Current : I = 130A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 5.5m(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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