OSG60R074HZF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OSG60R074HZF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 278 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 98.1 nS
Cossⓘ - Capacitancia de salida: 350.1 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.074 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de OSG60R074HZF MOSFET
- Selecciónⓘ de transistores por parámetros
OSG60R074HZF datasheet
osg60r074hzf osg60r074fzf.pdf
OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc
osg60r074hzf.pdf
OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
osg60r074hszf.pdf
OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di
osg60r074fzf.pdf
OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio
Otros transistores... HM4264B , HM4302 , HM4302B , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , IRFZ46N , OSG60R074FZF , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B .
History: SUP75N06-08 | SUD50N10-34P | RF1S40N10
History: SUP75N06-08 | SUD50N10-34P | RF1S40N10
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
mj21196g | irfb4115 | 21270 transistor | k3569 | irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor
