Справочник MOSFET. OSG60R074HZF

 

OSG60R074HZF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R074HZF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 98.1 ns
   Cossⓘ - Выходная емкость: 350.1 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.074 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для OSG60R074HZF

   - подбор ⓘ MOSFET транзистора по параметрам

 

OSG60R074HZF Datasheet (PDF)

 ..1. Size:1106K  1
 osg60r074hzf osg60r074fzf.pdf pdf_icon

OSG60R074HZF

OSG60R074xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Ultra-fast and robust body diode PC power Low R & FOM Server power supply DS(on) Excellent low switching loss Telecom Excellent stability and uniformity Solar invertor Easy to drive Super charger for automobiles OSG60R074HZF, OSG60R074FZF , Enhanc

 ..2. Size:379K  oriental semi
 osg60r074hzf.pdf pdf_icon

OSG60R074HZF

OSG60R074HZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

 4.1. Size:924K  oriental semi
 osg60r074hszf.pdf pdf_icon

OSG60R074HZF

OSG60R074HSZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery di

 5.1. Size:1017K  oriental semi
 osg60r074fzf.pdf pdf_icon

OSG60R074HZF

OSG60R074FZF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Z series is integrated with fast recovery dio

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... HM4264B , HM4302 , HM4302B , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , STP65NF06 , OSG60R074FZF , SRC60R078BTF , SRC60R078BT , SRC60R078BS2 , STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B .

History: STB300NH02L | STL10N65M2 | HUFA76413DK8TF085 | IRL60S216 | KIA18N50H-220F | SM4307PSKC-TRG | STB24N60DM2

 

 
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