HM4402B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4402B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 402 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de HM4402B MOSFET
HM4402B Datasheet (PDF)
hm4402b.pdf

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)
hm4402c.pdf

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
hm4402e.pdf

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)
hm4402a.pdf

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)
Otros transistores... STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , 5N50 , HM4402C , HM4402E , HM4406A , HM4407 , HM4407A , HM4410A , HM4410B , HM4412 .
History: VS3P07C | RCJ200N20 | 12N90 | IRF250P224
History: VS3P07C | RCJ200N20 | 12N90 | IRF250P224



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