HM4402B Datasheet and Replacement
Type Designator: HM4402B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 402 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
HM4402B substitution
HM4402B Datasheet (PDF)
hm4402b.pdf

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)
hm4402c.pdf

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
hm4402e.pdf

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)
hm4402a.pdf

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)
Datasheet: STK0825F , CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , 5N50 , HM4402C , HM4402E , HM4406A , HM4407 , HM4407A , HM4410A , HM4410B , HM4412 .
History: AP4920GM-HF | TK100A06N1 | SRC60R030FBS | AON6704A | IRFP153FI | STS65R190SS2TR | AUIRF1324L
Keywords - HM4402B MOSFET datasheet
HM4402B cross reference
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History: AP4920GM-HF | TK100A06N1 | SRC60R030FBS | AON6704A | IRFP153FI | STS65R190SS2TR | AUIRF1324L



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