HM4402C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM4402C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 402 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: SOP8

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HM4402C datasheet

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HM4402C

HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

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 hm4402e.pdf pdf_icon

HM4402C

HM4402E Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 8.2. Size:621K  cn hmsemi
 hm4402b.pdf pdf_icon

HM4402C

HM4402B N-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 8.3. Size:626K  cn hmsemi
 hm4402a.pdf pdf_icon

HM4402C

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)

MOSTRAR MÁS

Otros transistores... CS25N50AKR, HYG042N10NS1P, HYG042N10NS1B, SUP75N06-08, SUB75N06-08, HM4354, HM4402A, HM4402B, 2SK2842, HM4402E, HM4406A, HM4407, HM4407A, HM4410A, HM4410B, HM4412, HM4412A