All MOSFET. HM4402C Datasheet

 

HM4402C Datasheet and Replacement


   Type Designator: HM4402C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 402 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8
 

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HM4402C Datasheet (PDF)

 ..1. Size:464K  cn hmsemi
 hm4402c.pdf pdf_icon

HM4402C

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 8.1. Size:489K  cn hmsemi
 hm4402e.pdf pdf_icon

HM4402C

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 8.2. Size:621K  cn hmsemi
 hm4402b.pdf pdf_icon

HM4402C

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 8.3. Size:626K  cn hmsemi
 hm4402a.pdf pdf_icon

HM4402C

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)

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Datasheet: CS25N50AKR , HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , HM4402B , IRFP064N , HM4402E , HM4406A , HM4407 , HM4407A , HM4410A , HM4410B , HM4412 , HM4412A .

Keywords - HM4402C MOSFET datasheet

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