All MOSFET. HM4402C Datasheet

 

HM4402C MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4402C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 402 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 HM4402C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4402C Datasheet (PDF)

 ..1. Size:464K  cn hmsemi
hm4402c.pdf

HM4402C HM4402C

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 8.1. Size:489K  cn hmsemi
hm4402e.pdf

HM4402C HM4402C

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 8.2. Size:621K  cn hmsemi
hm4402b.pdf

HM4402C HM4402C

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 8.3. Size:626K  cn hmsemi
hm4402a.pdf

HM4402C HM4402C

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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