HM45N02Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM45N02Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.2 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: DFN3X3-8L
HM45N02Q Datasheet (PDF)
hm45n02q.pdf

HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n02d.pdf

HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n06d.pdf

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)
Otros transistores... HM4486E , HM4487 , HM4487A , HM4487B , HM4488 , HM4490 , HM4503 , HM45N02D , 4435 , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , HM4606 , HM4606A , HM4606B , HM4606C .



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