All MOSFET. HM45N02Q Datasheet

 

HM45N02Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM45N02Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN3X3-8L

 HM45N02Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM45N02Q Datasheet (PDF)

 ..1. Size:972K  cn hmsemi
 hm45n02q.pdf

HM45N02Q HM45N02Q

HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

 7.1. Size:1168K  cn hmsemi
 hm45n02d.pdf

HM45N02Q HM45N02Q

HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

 8.1. Size:669K  cn hmsemi
 hm45n06d.pdf

HM45N02Q HM45N02Q

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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