HM45N02Q Datasheet and Replacement
Type Designator: HM45N02Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DFN3X3-8L
HM45N02Q substitution
HM45N02Q Datasheet (PDF)
hm45n02q.pdf

HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n02d.pdf

HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n06d.pdf

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)
Datasheet: HM4486E , HM4487 , HM4487A , HM4487B , HM4488 , HM4490 , HM4503 , HM45N02D , 4435 , HM45N06D , HM45P02D , HM45P02Q , HM45P03K , HM4606 , HM4606A , HM4606B , HM4606C .
Keywords - HM45N02Q MOSFET datasheet
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