HM45N02Q MOSFET. Datasheet pdf. Equivalent
Type Designator: HM45N02Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DFN3X3-8L
HM45N02Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM45N02Q Datasheet (PDF)
hm45n02q.pdf
HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n02d.pdf
HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)
hm45n06d.pdf
HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918