HM45P02D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM45P02D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 577 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Encapsulados: DFN5X6-8L
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HM45P02D datasheet
hm45p02d.pdf
HM45P02D P-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON)
hm45p02q.pdf
HM45P02Q P-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON)
hm45p03k.pdf
HM45P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM45P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -45A D S RDS(ON)
Otros transistores... HM4487A , HM4487B , HM4488 , HM4490 , HM4503 , HM45N02D , HM45N02Q , HM45N06D , IRFB3607 , HM45P02Q , HM45P03K , HM4606 , HM4606A , HM4606B , HM4606C , HM4606D , HM4611 .
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