HM45P02D MOSFET Datasheet: P-Ch, 20V, 45A. Full specification with pinout and replacement list

HM45P02D Specs and Replacement

Type Designator: HM45P02D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 577 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5X6-8L

HM45P02D substitution

- MOSFET ⓘ Cross-Reference Search

HM45P02D datasheet

..1. Size:731K cn hmsemi
hm45p02d.pdf pdf_icon

HM45P02D P-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON) ... See More ⇒

7.1. Size:548K cn hmsemi
hm45p02q.pdf pdf_icon

HM45P02Q P-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON) ... See More ⇒

8.1. Size:1038K cn hmsemi
hm45p03k.pdf pdf_icon

HM45P03K P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM45P03K uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES V = -30V,ID = -45A D S RDS(ON) ... See More ⇒

Detailed specifications: HM4487A, HM4487B, HM4488, HM4490, HM4503, HM45N02D, HM45N02Q, HM45N06D, IRFB3607, HM45P02Q, HM45P03K, HM4606, HM4606A, HM4606B, HM4606C, HM4606D, HM4611