HM45P02D
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM45P02D
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 577
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
DFN5X6-8L
HM45P02D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM45P02D
Datasheet (PDF)
..1. Size:731K cn hmsemi
hm45p02d.pdf
HM45P02DP-Channel Enhancement Mode Power MOSFET Description The HM45P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A RDS(ON)
7.1. Size:548K cn hmsemi
hm45p02q.pdf
HM45P02QP-Channel Enhancement Mode Power MOSFET Description The HM45P02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-45A Schematic diagram RDS(ON)
8.1. Size:1038K cn hmsemi
hm45p03k.pdf
HM45P03KP-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM45P03K uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SSchematic diagram GENERAL FEATURES V = -30V,ID = -45A D SRDS(ON)
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