HM4826A Todos los transistores

 

HM4826A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM4826A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 45 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOP8
 

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HM4826A Datasheet (PDF)

 ..1. Size:968K  cn hmsemi
 hm4826a.pdf pdf_icon

HM4826A

HM4826A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =12.5A RDS(ON)

 8.1. Size:693K  cn hmsemi
 hm4826.pdf pdf_icon

HM4826A

HM4826 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =9A RDS(ON)

 9.1. Size:635K  cn hmsemi
 hm4822b.pdf pdf_icon

HM4826A

HM4822B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

 9.2. Size:617K  cn hmsemi
 hm4822.pdf pdf_icon

HM4826A

HM4822 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... HM4806B , HM4806C , HM4812 , HM4813 , HM4821 , HM4822 , HM4822B , HM4826 , IRF1405 , HM4828 , HM4828A , HM4830 , HM4840 , HM4843 , HM4853 , HM4853A , HM4853B .

History: HM4853 | BSS806NE | HM4884 | BSS84AKMB | IXKN40N60C | ZXMN15A27KTC | BSS816NW

 

 
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