HM4826A MOSFET. Datasheet pdf. Equivalent
Type Designator: HM4826A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 12.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
HM4826A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM4826A Datasheet (PDF)
hm4826a.pdf
HM4826A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =12.5A RDS(ON)
hm4826.pdf
HM4826 Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS = 60V,ID =9A RDS(ON)
hm4822b.pdf
HM4822B Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)
hm4822.pdf
HM4822 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4822 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =10A Schematic diagram RDS(ON)
hm4828.pdf
HM4828Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)
hm4821.pdf
HM4821Dual P-Channel Enhancement Mode Power MOSFET Description The HM4821 uses advanced trench technology and D1D2design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. G1 G2General Features S1 S2 VDS =-60V,ID =-6.5A Schematic diagram RDS(ON)
hm4828a.pdf
HM4828ADual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4828A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A Schematic diagram RDS(ON)
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
